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inchange semiconductor product specification silicon npn power transistors 2SC5382 description ? with to-220f package ? high voltage ? high speed switching pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1200 v v ceo collector-emitter voltage open base 550 v v ebo emitter-base voltage open collector 9 v i c collector current 6 a i cm collector current-peak 12 a i b base current 3 a i bm base current-peak 6 a p t total power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter max unit r th j-c thermal resistance junction case 3.13 ??/w fig.1 simplified outline (to-220f) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC5382 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.1a; i b =0 550 v v cesat collector-emitter saturation voltage i c =3a; i b =0.6 a 1.0 v v besat base-emitter saturation voltage i c =3a; i b =0.6 a 1.5 v i cbo collector cut-off current v cb =1200v; i e =0 0.1 ma i ceo collector cut-off current v ce =550v; i b =0 0.1 ma i ebo emitter cut-off current v eb =9v; i c =0 0.1 ma h fe-1 dc current gain i c =3a ; v ce =5v 10 h fe-2 dc current gain i c =1ma ; v ce =5v 10 switching times t on turn-on time 1.3 | s t s storage time 4.0 | s t f fall time i c =3a;i b1 =0.6a ;i b2 =1.2a r l =50 |? ;v bb2 =4v 0.3 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC5382 package outline fig.2 outline dimensions

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